The electronic components DG408 and electronic component DG409 feature lower signal ON resistance (<100Ω) and faster switch transition time (tTRANS < 250ns) compared to the DG508A or DG509A. Charge injection has been reduced, simplifying sample and hold applications.
The improvements in the DG408 series are made possible by using a high-voltage silicon-gate process. An epitaxial layer prevents the latch-up associated with older CMOS
technologies. Power supplies may be single-ended from +5V to +34V, or split from ±5V to ±20V.
The analog switches are bilateral, equally matched for AC or bidirectional signals. The ON resistance variation with analog signals is quite low over a ±5V analog input range.
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